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| SI1305DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.280 @ VGS = - 4.5 V -8 0.380 @ VGS = - 2.5 V 0.530 @ VGS = - 1.8 V ID (A) - 0.92 - 0.79 - 0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Code LB XX YY Lot Traceability and Date Code Part # Code Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS - 0.28 0.34 0.22 - 55 to 150 - 0.74 -3 - 0.24 0.29 0.19 W _C - 0.69 A Symbol VDS VGS 5 secs -8 Steady State Unit V "8 - 0.92 - 0.86 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71076 S-03721--Rev. C, 07-Apr-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 315 360 285 Maximum 375 430 340 Unit _C/W C/W 2-1 SI1305DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 6.4 V, VGS = 0 V VDS = - 6.4 V, VGS = 0 V, TJ = 70_C VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 1 A Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 0.5 A VGS = - 1.8 V, ID = - 0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = - 5 V, ID = - 1 A IS = - 0.3 A, VGS = 0 V -3 0.230 0.315 0.440 3.5 - 1.2 0.280 0.380 0.530 S V W - 0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1 A, di/dt = 100 A/ms VDD = - 4 V, RL = 4 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W VDS = - 4 V, VGS = - 4.5 V, ID = - 1 A 2.6 0.6 0.5 8 55 17 12 27 15 80 25 20 45 ns 4 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 4.5 V 4V 6 I D - Drain Current (A) I D - Drain Current (A) 3V 4 3.5 V 5 6 Transfer Characteristics TC = - 55_C 25_C 4 2.5 V 125_C 3 2V 2 1.5 V 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71076 S-03721--Rev. C, 07-Apr-03 www.vishay.com 2-2 SI1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.4 r DS(on) - On-Resistance ( W ) 1.2 VGS = 2.5 V C - Capacitance (pF) VGS = 1.8 V 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 350 300 250 200 150 100 50 0 0 2 4 6 8 Crss Coss Ciss Capacitance VGS = 4.5 V ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 1 A 6 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 1.2 4 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 0.8 2 0.4 0 0 1 Qg - Total Gate Charge (nC) 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 1.0 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) TJ = 150_C 0.8 0.6 ID = 1 A 0.1 0.4 TJ = 25_C 0.01 0.2 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71076 S-03721--Rev. C, 07-Apr-03 www.vishay.com 2-3 SI1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 20 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 16 12 TA = 25_C 8 0.1 0.0 4 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 2-4 Document Number: 71076 S-03721--Rev. C, 07-Apr-03 |
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